Shanghai Si Technology Co., Ltd.

A?Solar energy gear polysilion
1. Base description :silicon deped is 99.9999%
2. Boron dope
d :<0.20ppba
3. P.phospherus doped:0.90ppba
4. Carbon doped:1.00ppba
5. Metal doped:<30.00ppbab6. Metal surf
ce doped:<30.00ppba
7. Length :25-250mm
8. Type:p-type
9. Resistivity:>0.50ohmcm
B?Break semiconducter si
licom wafer
Description
1. Base description :break senivonductor silicon wafer
2. Shape:arc
3. Thickness:>=4
00um
4. Type:P-type
5. Resisfivity:>0.50ohmcn
C?Minor Polysilicon
Description
1. Type:n-type
2. Resi
sfivity:50 ohmcn"
3. Carbon iloped:<5*1016/m39
4. Fluorin doped:<5*1017/m3
5. Shape:block
6. Length:>4
mm
7. Washing-free is the better with no oxide and infusible substance
F?IC materid
1. Washing-free is the better<
br>2. N-type resitivity>10ohcm
3. P-type resitivity>0.5ohcm
4. Shape:block
5. Length:>30mm
6. Thicknes
s:>0.5mm
7. With no infusible subsface and air bubbk